K1solution supplies high-quality single crystalline silicon carbide (SiC) wafers for customers Korea. We are a reliable business partner for all our customers. Our commitment to advanced techniques, quality and most rapid service is essential for our customers' success. 

Our supplier expertise includes the whole process of manufacturing SiC-wafers such as: 

• numerical simulation 

• crystal growth 

• wafering 

• characterization 

• quality control 

The unique electronic, mechanical and thermal properties of silicon carbide (SiC) make it ideally suited for electronic devices that need to operate at high temperature (above 400° C) and high power, well beyond the capability of both silicon and gallium arsenide. SiC has key advantages over current electronic component technologies, including higher power density, better heat dissipation, and increased bandwidth capability. SiC devices and substrates are currently used in light-emitting diodes, high power and high frequency devices, as well as in high radiation environments.

We offer both 6H and 4H SiC polytypes for semi-conducting and semi-insulating requirements.