Features

- Compact design

- Optimized for the removal of thick photo resist layers (e.g. SU-8, KMPR, etc.)

- Can also be used for isotropic etching of materials like Si, SiO , SiN, SiO N , W, Mo, etc. 2 x y

- Pure chemical etching with no attack on the etching sample by ions

- Integrated compact RPS (Remote Plasma Source)

- Water-cooled plasma zone

- Very low thermal load for substrates

- Substrate size up to 240 mm x 240 mm

- No attack to metals (Ni, Ni/Fe, Au, Cu, etc.)

- Only very slight attack to Si and Si compounds such as SiO or Si N 2 3 4

- High environmental compliance

- For 1 x 8” or 1 x 6” or 2 x 4” wafers